Design and Optimization of Silicon Carbide Schottky Diode - Technical Articles
Ruggedness of 1200 V SiC MPS diodes - ScienceDirect
Figure 1 from Silicon carbide pinched barrier rectifier (PBR) | Semantic Scholar
Materials | Free Full-Text | The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes
Why all SiC Schottky diodes are not made equal | Efficiency Wins
GC15MPS12-247 - Genesic Semiconductor - Silicon Carbide Schottky Diode, MPS, Single
Source 36V MP TVS Diode Uni-directional DO-214AA RoHS IN STOCK sample available SMBJ36A TVS 600w diode on m.alibaba.com
SiC JBS/ MPS Diode I-V Operation
![2 -a) Structure of MPS diode (source: modified from [15]), b) DMOSFET... | Download Scientific Diagram](https://www.researchgate.net/publication/338632875/figure/fig3/AS:848021285777409@1579195438122/2-a-Structure-of-MPS-diode-source-modified-from-15-b-DMOSFET-source-modified.png "2 -a) Structure of MPS diode (source: modified from [15]), b) DMOSFET... | Download Scientific Diagram")
2 -a) Structure of MPS diode (source: modified from [15]), b) DMOSFET... | Download Scientific Diagram
Automotive-Grade Ideal Diode Controller with Reverse Polarity Protection: MPQ5850 | Video | MPS
a) Electrostatic potential distribution inside the MPS diode at low... | Download Scientific Diagram
Reverse Characteristic Model of SiC MPS Diode | SpringerLink
The Wolfspeed MPS Diode Advantage - YouTube
Basic unit cell of a MPS diode | Download Scientific Diagram
Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress - Technical Articles
MPS (Merged p-i-n/Schottky) Diode
Advantages of the 1200 V SiC Schottky Diodes with MPS Design | Mouser
Improved JBS structure to reduce the leakage current and increase the surge current capability | 臺灣東芝電子零組件股份有限公司 | 台灣
Figure 1 from Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics | Semantic Scholar
